The project was accomplished ahead of schedule and all the
tasks were fulfilled. The comparison between Project 27 (50% Hf) indicates that
a higher oxide permittivity will show some of the positive effect on MOS
capacitor, but negative side should not be ignored. Further research need to
target on the fixed oxide charge density and try to decrease it.
Apart from the general calculation, a MatLab program was
written to calculate the electrical properties of the high-k gate stacks, The
output result is shown below:
The program needs to input the Capacitance, Voltage and
Resistance data for calculation. Therefore, it can be used to calculate other gate
materials with input data. If you are interested in the source code, please
contact us.
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